Strain Engineered MOSFETs.
Picture Of The Book:
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| Strain Engineered MOSFETs |
About The Book:
This book focuses on recent developments in engineered MOSFETS that are implemented in high-mobility substrates such as Ge, SiGe, strained-Si and German-Germanium platforms over the compact buffer, in addition to high-k condensers and metal gate. It covers aspects of materials, principles, advanced hardware design, fabrication, and applications. It also introduces the TCAD design methodology for complete Si-CMOS computer-aided design for stress engineering, which includes data flow from process simulations to a simulation of process variance by simulating the device and creating built-in SPICE processes to improve productivity.
Information About The Book:
Title: Strain Engineered MOSFETs.
Language: English.
Size: 13.2 Mb.
Pages: 311.
Format: Pdf.
Year: 2012.
Edition: 1.
Author: C K Maiti and T K Maiti.
Contents Of The Book:
Chapter 1. Introduction.
Chapter 2. Substrate-Induced Strain Engineering in CMOS Technology.
Chapter 3. Process-Induced Stress Engineering in CMOS Technology.
Chapter 4. Electronic Properties of Strain-Engineered Semiconductors.
Chapter 5. Strain-Engineered MOSFETs.
Chapter 6. Noise in Strain-Engineered Devices.
Chapter 7. Technology CAD of Strain-Engineered MOSFETs.
Chapter 8. Reliability and Degradation of Strain-Engineered MOSFETs.
Chapter 9. Process Compact Modelling of Strain-Engineered MOSFETs.
Chapter 10. Process-Aware Design of Strain-Engineered MOSFETs.
Chapter 11. Conclusions.
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